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By Henry Baltes, Oliver Brand, Gary K. Fedder, Christofer Hierold, Visit Amazon's Jan G. Korvink Page, search results, Learn about Author Central, Jan G. Korvink, , Osamu Tabata

Microstructures, electronics, nanotechnology - those big fields of study are starting to be jointly because the dimension hole narrows and plenty of diversified fabrics are mixed. present study, engineering sucesses and newly commercialized items trace on the significant cutting edge potentials and destiny functions that open up as soon as mankind controls form and serve as from the atomic point correct as much as the seen international with none gaps.Sensor platforms, microreactors, nanostructures, nanomachines, sensible surfaces, built-in optics, monitors, communications expertise, biochips, human/machine interfaces, prosthetics, miniaturized clinical and surgical procedure gear and plenty of extra possibilities are being explored.This new sequence, complex Micro and Nano platforms, presents state-of-the-art studies from best authors on applied sciences, units and complicated platforms from the micro and nano worlds.

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Bottom: SEM photograph shows details of the micromirror yoke and hinges (images from Texas InstruFig. com). (b) SEM image of surface-micromachined polySi57Ge43 bolometer structures. Courtesy of IMEC, Leuven, Belgium. (c) Detail of surfacemicromachined 4 lm thick polysilicon microstructure. 3 CMOS-compatible Design of MEMS and NEMS Can I modify the CMOS process sequence to co-integrate microelectromechanical systems with CMOS circuitry? Can I modify the CMOS process design rules to implement my microstructure?

The etch rates in preferentially etched crystal directions such as the h100i and the h110i directions, and the ratio of the etching rates in different crystal directions depend strongly on the exact chemical composition of the etching solution and the process temperature [57, 58, 60, 62]. The most common anisotropic silicon etching solution is potassium hydroxide, KOH. e. etch rate ratio, between the h100i and h111i directions of 30–100 : 1 [63]. Since the etch rate of silicon dioxide in KOH solutions is fairly high (for thermal oxide *1 lm/h in 6 M KOH solution [58]), silicon nitride films are often used as etching mask.

The additional process steps (or process modules) can either precede the standard CMOS process sequence (pre-CMOS) or they can be performed in between the regular CMOS steps (intra-CMOS) or after the completion of the CMOS process (post-CMOS) [99, 100]. In the case of post-CMOS micromachining, the microstructures are built from either the CMOS layers themselves or from additional layers deposited on top of the CMOS wafer. Tab. 4 summarizes various CMOS-based microsystem approaches found in the literature.

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